Patent · US Active

Method for producing ceramic passivation layers on silicon for solar cell manufacture

US8482106B2 · kind B2 · utility

0Cited by

2References

9Claims

0Family size

Assignee

AZ Electronic Materials (Luxembourg) S.A.R.L. · LU

Inventors

Klaus Rode · Treuchtlingen, DE
Hartmut Wiezer · Gersthofen, DE

Key dates

Filing date	Aug 26, 2009
Grant date	Jul 9, 2013
Priority date	—
Expiry date	Feb 8, 2030

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02P70/50
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

The invention relates to a method for producing passivation layers on crystalline silicon by a) coating the silicon with a solution containing at least one polysilazane of the general formula (1): —(SiR′R″—NR′″)-n, wherein R′, R″, R′″ are the same or different and stand independently of each other for hydrogen or a possibly substituted alkyl, aryl, vinyl, or (trialkoxysilyl)alkyl group, wherein n is an integer and n is chosen such that the polysilazane has a number average molecular weight of 150 to 150,000 g/mol, b) subsequently removing the solvent by evaporation, whereby polysilazane layers of 50-500 nm thickness remain on the silicon wafer, and c) heating the polysilazane layer at normal pressure to 200-1000° C. in the presence of air or nitrogen, wherein upon tempering the ceramic layers release hydrogen for bulk passivation of the silicon.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.