Sputter deposition of cermet resistor films with low temperature coefficient of resistance
US8482375B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | May 24, 2010 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Feb 19, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T29/49099
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A solution for producing nanoscale thickness resistor films with sheet resistances above 1000Ω/□ (ohm per square) and low temperature coefficients of resistance (TCR) from −50 ppm/° C. to near zero is disclosed. In a preferred embodiment, a silicon-chromium based compound material (cermet) is sputter deposited onto a substrate at elevated temperature with applied rf substrate bias. The substrate is then exposed to a process including exposure to a first in-situ anneal under vacuum, followed by exposure to air, and followed then by exposure to a second anneal under vacuum. This approach results in films that have thermally stable resistance properties and desirable TCR characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.