Image sensing device and camera
US8482646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 2010 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Apr 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/601
Abstract
An image sensing device comprises a pixel array, and a peripheral circuit, a column selecting circuit, and a readout, wherein each pixel includes a photodiode, a floating diffusion, a transfer PMOS transistor to the floating diffusion, an amplifier PMOS transistor, and a reset PMOS transistor, the amplifier PMOS transistor has a gate which is formed by an n-type conductive pattern, and is isolated by a first element isolation region and an n-type impurity region which covers at least a lower portion of the first element isolation region, and each PMOS transistor included in the column selecting circuit has a gate which is formed by a p-type conductive pattern and is isolated by a second element isolation region, and an n-type impurity concentration in a region adjacent to a lower portion of the second element isolation region is lower than that in the n-type impurity region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.