Semiconductor memory device and method for driving the same
US8482974B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 7, 2011 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Sep 30, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D86/60
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a first signal line, a second signal line, a memory cell, and a potential converter circuit. The memory cell includes a first transistor including a first gate electrode, a first source electrode, a first drain electrode, and a first channel formation region; a second transistor including a second gate electrode, a second source electrode, a second drain electrode, and a second channel formation region; and a capacitor. The first channel formation region and the second channel formation region include different semiconductor materials. The second drain electrode, one electrode of the capacitor, and the first gate electrode are electrically connected to one another. The second gate electrode is electrically connected to the potential converter circuit through the second signal line.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.