Laser diode element assembly and method of driving the same
US8483256B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Mar 12, 2012 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Mar 12, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/166
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser diode element assembly includes: a laser diode element; and a light reflector, in which the laser diode element includes (a) a laminate structure body configured by laminating, in order, a first compound semiconductor layer of a first conductivity type made of a GaN-based compound semiconductor, a third compound semiconductor layer made of a GaN-based compound semiconductor and including a light emission region, and a second compound semiconductor layer of a second conductivity type made of a GaN-based compound semiconductor, the second conductivity type being different from the first conductivity type, (b) a second electrode formed on the second compound semiconductor layer, and (c) a first electrode electrically connected to the first compound semiconductor layer, the laminate structure body includes a ridge stripe structure, and a minimum width Wmin and a maximum width Wmax of the ridge stripe structure satisfy 1<Wmax/Wmin<3.3 or 6≦Wmax/Wmin≦13.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.