Patent · US Active

Optical modulation structure and optical modulator

US8483520B2 · kind B2 · utility

1Cited by

3References

10Claims

0Family size

Assignee

NEC CORPORATION · JP

Inventors

Junichi Fujikata · Tokyo, JP
Jun Ushida · Tokyo, JP
Akio Toda · Kasai, JP
Motofumi Saitoh · Tokyo, JP

Key dates

Filing date	Feb 18, 2010
Grant date	Jul 9, 2013
Priority date	—
Expiry date	Mar 7, 2030

Classification

Technology area (CPC G)Physics
CPC primaryG02F1/025
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An optical modulation structure includes a lower cladding layer (102), a first silicon layer (103) integrally formed from silicon of a first conductivity type on the lower cladding layer (102) while including a core (104) and slab regions (105) arranged on both sides of the core (104) and connected to the core, a concave portion (104a) formed in an upper surface of the core (104), and a second silicon layer (109) of a second conductivity type formed on a dielectric layer (108) in the concave portion (104a) so as to fill the concave portion (104a).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.