Integrated electro-optic device and method of making
US8483524B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 7, 2008 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Feb 27, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02B6/1221
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
An electro-optic polymer semiconductor integrated circuit includes one or more doped regions configured to drive one or more electrodes, and the electrodes are configured to drive a juxtaposed electro-optic core. The assembly may include a planarization layer disposed at least partially coplanar with the electrodes. The circuit may include an integrated multiplexer, driver configured to receive a signal from the multiplexer, at least one high speed electrode configured to be driven by the driver and modulate light energy passed through a hyperpolarizable poled chromophore regions disposed near the high speed electrode. The circuit may include a calibration storage circuit. The circuit may include, during fabrication, structures to provide voltage to a buried electrode and a shield to prevent damage from the poling field.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.