Circuits, processes, devices and systems for full integration of RF front end module including RF power amplifier
US8483627B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 5, 2009 |
| Grant date | Jul 9, 2013 |
| Priority date | — |
| Expiry date | Jun 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03F2203/45731
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An electronic circuit comprising a transistor-based RF (radio frequency) power amplifier (112) having balanced outputs (172, 176), a transistor-based receiver RF amplifier (116) having balanced inputs (152, 156) ohmically connected to said balanced outputs (172, 176) respectively of said RF power amplifier (112), and a balun (114) having a primary (182, 186) and a secondary (188), said primary (182, 186) having primary connections and a supply connection (185) of said primary (182, 186) intermediate said primary connections and said primary connections ohmically connected both to said balanced outputs (172, 176) of said RF power amplifier (112) respectively and to said balanced inputs (152, 156) of said receiver RF amplifier, thereby to switchlessly couple RF between the balun (114) and the RF power amplifier (112) and switchlessly couple RF between the balun (114) and the receiver RF amplifier (116). Other electronic circuits, processes, devices and systems are disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.