Atomic layer deposition apparatus and method of fabricating atomic layer using the same
US8486195B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 26, 2010 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Dec 30, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.