Method for manufacturing high efficiency light-emitting diodes
US8486742B2 · kind B2 · utility
0Cited by
4References
20Claims
0Family size
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Key dates
| Filing date | Jul 26, 2011 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Nov 28, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3043
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for manufacturing a light-emitting device comprising the steps of: providing a substrate comprising a first surface and a second surface; forming a plurality of cutting lines on the substrate by a laser beam; cleaning the substrate by a chemical solution; and forming a light-emitting stack on an first surface of the substrate after cleaning the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.