Semiconductor device and method of manufacturing the same
US8486783B2 · kind B2 · utility
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1References
17Claims
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Key dates
| Filing date | Feb 11, 2010 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Aug 29, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
A method of manufacturing a semiconductor device includes: forming a trench for forming buried type wires by etching a substrate; forming first and second oxidation layers on a bottom of the trench and a wall of the trench, respectively; removing a part of the first oxidation layer and the entire second oxidation layer; and forming the buried type wires on the wall of the trench by performing a silicide process on the wall of the trench from which the second oxidation layer is removed. As a result, the buried type wires are insulated from each other.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.