Infrared image sensor
US8487259B2 · kind B2 · utility
6Cited by
1References
16Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 15, 2010 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Jul 27, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F39/8063
Abstract
An image sensor comprises a photoelectric conversion element receiving light to accumulate photocharges, and a wavelength conversion layer formed above the photoelectric conversion element to convert light within a first wavelength band into light within a second wavelength band shorter than the first wavelength band and supply the converted light to the photoelectric conversion element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.