Field effect transistor, method for manufacturing the same, and biosensor
US8487297B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Dec 25, 2009 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Jan 21, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K85/221
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Disclosed is a carbon nanotube field effect transistor which stably exhibits excellent electrical conduction properties. Also disclosed are a method for manufacturing the carbon nanotube field effect transistor, and a biosensor comprising the carbon nanotube field effect transistor. First of all, an silicon oxide film is formed on a contact region of a silicon substrate by an LOCOS method. Next, an insulating film, which is thinner than the silicon oxide film on the contact region, is formed on a channel region of the silicon substrate. Then, after arranging a carbon nanotube, which forms a channel, on the silicon substrate, the carbon nanotube is covered with a protective film. Finally, a source electrode and a drain electrode are formed, and the source electrode and the drain electrode are electrically connected to the carbon nanotube, respectively. A field effect transistor manufactured by these processes stably exhibits excellent electrical conduction properties since the carbon nanotube, which serves as the channel, is not contaminated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.