Patent · US Active

Diamond semiconductor element and process for producing the same

US8487319B2 · kind B2 · utility

1Cited by
39References
21Claims
0Family size

Assignee

Inventors

Key dates

Filing dateNov 30, 2010
Grant dateJul 16, 2013
Priority date
Expiry dateNov 30, 2030

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/60
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

An integrated optical waveguide has a first optical waveguide, a second optical waveguide, and a groove. The second optical waveguide is coupled to the first optical waveguide and has a refractive index that is different from the first optical waveguide. The groove is disposed so as to traverse an optical path of the first optical waveguide and is separated from an interface between the first optical waveguide and the second optical waveguide by a predetermined spacing. The spacing from the interface and the width of the groove are determined such that reflection at a boundary between the first optical waveguide and the second optical waveguide is weakened. A semiconductor board may be disposed at a boundary between the first optical waveguide and the second optical waveguide. In this case, the width of the groove and the thickness of the semiconductor board are determined such that light reflected off an interface between the first optical waveguide and the groove is weakened by light reflected from an interface between the groove and the semiconductor board, and by light reflected from an interface between the semiconductor board and the second optical waveguide.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.