Semiconductor device, semiconductor integrated circuit device for use of driving plasma display with using same, and plasma display apparatus
US8487343B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2010 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Jun 13, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A horizontal-type IGBT having a large current density, which is formed on a SOI substrate, has an emitter region, which is made up with two (2) or more of base-layers of a second conductivity-type on an oxide film groove, wherein the base-layers of the second conductivity-type in the emitter region are covered with a layer of a first conductivity-type, being high in the conductivity than a drift layer, and length of a gate electrode on the oxide film groove is reduced than the length of the gate electrode on the collector, and further the high-density layer of the first conductivity-type is formed below the base layer of the second conductivity-type on the collector, thereby achieving the high density of the layer of the first conductivity-type while maintaining an endurable voltage, and an increase of the current density.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.