Semiconductor device and method of manufacturing semiconductor device
US8487375B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Oct 25, 2010 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Nov 19, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes a compound semiconductor layer provided over a substrate, a plurality of source electrodes and a plurality of drain electrodes provided over the compound semiconductor layer, a plurality of first vias each of which is configured to pass through the compound semiconductor layer and be coupled to a corresponding one of the plurality of source electrodes, a plurality of second vias each of which is configured to pass through the compound semiconductor layer and be coupled to a corresponding one of the plurality of drain electrodes, a common source wiring line configured to be coupled to the plurality of first vias and be buried in the substrate, and a common drain wiring line configured to be coupled to the plurality of second vias and be buried in the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.