Memory cell with stress-induced anisotropy
US8487390B2 · kind B2 · utility
36Cited by
88References
9Claims
0Family size
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Key dates
| Filing date | Apr 6, 2009 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Dec 9, 2030 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C11/161
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory element that has a stress-induced magnetic anisotropy. The memory element has a ferromagnetic free layer having a switchable magnetization orientation switchable, a ferromagnetic reference layer having a pinned magnetization orientation, and a non-magnetic spacer layer therebetween. The free layer may be circular, essentially circular or nearly circular.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.