High power density betavoltaic battery
US8487392B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 6, 2010 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Jun 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F30/29
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
To increase total power in a betavoltaic device, it is desirable to have greater radioisotope material and/or semiconductor surface area, rather than greater radioisotope material volume. An example of this invention is a high power density betavoltaic battery. In one example of this invention, tritium is used as a fuel source. In other examples, radioisotopes, such as Nickel-63, Phosphorus-33 or promethium, may be used. The semiconductor used in this invention may include, but is not limited to, Si, GaAs, GaP, GaN, diamond, and SiC. For example (for purposes of illustration/example, only), tritium will be referenced as an exemplary fuel source, and SiC will be referenced as an exemplary semiconductor material. Other variations and examples are also discussed and given.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.