Semiconductor light emitting device
US8488647B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 30, 2010 |
| Grant date | Jul 16, 2013 |
| Priority date | — |
| Expiry date | Oct 15, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/18325
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention provides a semiconductor light emitting device realizing increased light detection precision by a simple manufacture process. One or more second oxidation layers are provided between an active layer and a semiconductor light detecting element in addition to a first oxidation layer for narrowing current. Since natural emission light includes many divergence components, the natural emission light is reflected and scattered by the second oxidation layer, and propagation of the natural emission light to the semiconductor light detecting element side is suppressed. The detection level of the natural emission light by the semiconductor light detecting element decreases, and light detection precision increases. The first and second oxidation layers are formed by a single oxidizing process so that the manufacturing process is simplified.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.