Selecting PA bias levels of RF PA circuitry during a multislot burst

US8489048B2 · kind B2 · utility

Assignee

• RF Micro Devices, Inc. · US

Inventors

• Roman Zbigniew Arkiszewski · Oak Ridge, US
• Brian Baxter · Greensboro, US
• Stuart Williams · Lenexa, US
• Hirofumi Honjo · Palo Alto, US
• William David Southcombe · San Diego, US
• David E. Jones · Layton, US
• Chris Levesque · Willow View Lane, US
• Scott Yoder · Fuquay-Varina, US
• Terry J. Stockert · Cedar Rapids, US

Key dates

• Filing date: Nov 28, 2011
• Grant date: Jul 16, 2013
• Expiry date: Nov 28, 2031

Classification

• Technology area (CPC —): General

Abstract

Power amplifier (PA) control circuitry and PA bias circuitry are disclosed. During one slot of a multislot transmit burst from radio frequency (RF) PA circuitry, the PA control circuitry selects one PA bias level of the RF PA circuitry and the RF PA circuitry has one output power level. The RF PA circuitry has a next output power level during an adjacent next slot of the multislot transmit burst. If the one output power level exceeds the next output power level by more than a power drop limit, then the PA control circuitry maintains the one PA bias level during the adjacent next slot. If the one output power level significantly exceeds the next output power level, but by less than the power drop limit, then the PA control circuitry selects a next PA bias level, which is less than the one PA bias level, during the adjacent next slot.