Glass substrate for semiconductor device component and process for producing glass substrate for semiconductor device component
US8491983B2 · kind B2 · utility
14Cited by
3References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Jun 29, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/24273
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
It is an object of the present invention to provide a glass substrate having plural through-holes which is not likely to peel from a silicon wafer, even though laminated on and jointed to a the silicon wafer and then subjected to heat treatment. The above object is accomplished by a glass substrate having an average thermal expansion coefficient of from 10×10−7 to 50×10−7/K within a range of from 50° C. to 300° C., having plural through-holes with a taper angle of from 0.1 to 20° and having a thickness of from 0.01 to 5 mm.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.