Patent · US Active

Silicon/gold seed structure for crystalline alignment in a film stack

US8492010B2 · kind B2 · utility

2Cited by
3References
15Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMay 1, 2010
Grant dateJul 23, 2013
Priority date
Expiry dateOct 19, 2030

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10T428/12674
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A silicon/gold (Si/Au) bilayer seed structure is located in a film stack between an amorphous or crystalline lower layer and an upper layer with a well-defined crystalline structure. The seed structure includes a Si layer on the generally flat surface of the lower layer and a Au layer on the Si layer. The Si/Au interface initiates the growth of the Au layer with a face-centered-cubic (fcc) crystalline structure with the (111) plane oriented in-plane. The upper layer grown on the Au layer has a fcc or hexagonal-close-packed (hcp) crystalline structure. If the upper layer is a fcc material its [111] direction is oriented substantially perpendicular to the (111) plane of the Au layer and if the upper layer is a hcp material, its c-axis is oriented substantially perpendicular to the (111) plane of the Au layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.