Semiconductor device structure and method for manufacturing the same

US8492206B2 · kind B2 · utility

Assignee

• INSTITUTE OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES · CN

Inventors

• Huicai Zhong · San Jose, US
• Jun Luo · Chongqing, CN
• Qingqing Liang · Fishkill, US
• Huilong Zhu · Poughkeepsie, US

Key dates

• Filing date: Aug 29, 2011
• Grant date: Jul 23, 2013
• Expiry date: Aug 29, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/215

Abstract

A semiconductor device structure and a method for manufacturing the same are disclosed. In one embodiment, the method comprises: forming a fin in a first direction on a semiconductor substrate; forming a gate line in a second direction crossing the first direction on the semiconductor substrate, the gate line intersecting the fin via a gate dielectric layer; forming a dielectric spacer surrounding the gate line; forming a conductive spacer surrounding the dielectric spacer; and performing inter-device electrical isolation at a predetermined region, wherein isolated portions of the gate line form gate electrodes of respective unit devices, and isolated portions of the conductive spacer form contacts of the respective unit devices.