Method for selective deposition of a semiconductor material
US8492273B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Aug 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76879
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is disclosed comprising providing a substrate comprising an insulating material and a second semiconductor material and pre-treating the substrate with a plasma produced from a gas selected from the group consisting of a carbon-containing gas, a halogen-containing gas, and a carbon-and-halogen containing gas. The method further comprises depositing a first semiconductor material on the pre-treated substrate by chemical vapor deposition, where the first semiconductor material is selectively deposited on the second semiconductor material. The method may be used to manufacture a semiconducting device, such as a microelectromechanical system device, or to manufacture a semiconducting device feature, such as an interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.