Tunable infrared emitter
US8492737B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Nov 18, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Nov 18, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01J3/108
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
Provided are methods of tuning the emission wavelength from a tunable infrared plasmonic emitting structure, which structure comprises: (a) a perforated or patterned first conductive layer having a plurality of relief features provided in a periodic spatial configuration, wherein the relief features are separated from each other by adjacent recessed features, wherein the distance between features is between 1-15 μm; (b) a dielectric layer underlying the first conductive layer; (c) a second conductive layer underlying the dielectric film; and (d) a substrate underlying the second conductive layer; wherein the emission wavelength is tuned by applying a force in a biaxial direction parallel to the substrate, changing the distance between relief features, or changing the resistivity and dielectric constant of the dielectric layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.