Semiconductor device and method for manufacturing the same
US8492757B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 4, 2010 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Sep 30, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02554
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
It is an object to provide a highly reliable semiconductor device including a thin film transistor with stable electric characteristics. In a semiconductor device including an inverted staggered thin film transistor whose semiconductor layer is an oxide semiconductor layer, a buffer layer is provided over the oxide semiconductor layer. The buffer layer is in contact with a channel formation region of the semiconductor layer and source and drain electrode layers. A film of the buffer layer has resistance distribution. A region provided over the channel formation region of the semiconductor layer has lower electrical conductivity than the channel formation region of the semiconductor layer, and a region in contact with the source and drain electrode layers has higher electrical conductivity than the channel formation region of the semiconductor layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.