Non-linear element, display device including non-linear element, and electronic device including display device
US8492806B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 26, 2010 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Oct 8, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/91
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A non-linear element, such as a diode, in which an oxide semiconductor is used and a rectification property is favorable is provided. In a thin film transistor including an oxide semiconductor in which the hydrogen concentration is less than or equal to 5×1019/cm3, the work function φms of a source electrode in contact with the oxide semiconductor, the work function φmd of a drain electrode in contact with the oxide semiconductor, and electron affinity χ of the oxide semiconductor satisfy φms≦χ<φmd. By electrically connecting a gate electrode and the drain electrode of the thin film transistor, a non-linear element with a more favorable rectification property can be achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.