Spin injection electrode structure, spin transport element, and spin transport device
US8492809B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Aug 24, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Mar 13, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D48/40
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
The present invention provides a spin injection electrode structure, a spin transport element, and a spin transport device which enable effective spin injection in a silicon channel layer at room temperature. A spin injection electrode structure IE comprises a silicon channel layer 12, a first magnesium oxide film 13A disposed on a first part of the silicon channel layer 12, and a first ferromagnetic layer 14A disposed on the first magnesium oxide film 13A. The first magnesium oxide film 13A partly includes a first lattice-matched part P lattice-matched with both of the silicon channel layer 12 and the first ferromagnetic layer 14A.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.