Beta voltaic semiconductor diode fabricated from a radioisotope
US8492861B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2010 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Oct 19, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG21H1/06
- WIPO fieldEngines, pumps, turbines
- WIPO sectorMechanical engineering
Abstract
In one preferred embodiment, a semiconductor diode includes a first layer formed with a p-type semiconductor, a second layer formed with an n-type semiconductor, and a third active depletion layer contained between the first and second layers. The third layer is formed with a radioisotope of the p-type and n-type semiconductors (preferably Si 32) such that initial emission of beta particles begins in the active depletion region and substantially all of the emitted beta particles are contained within the first, second and third layers during operation. The p-type and n-type layers each have sufficient depth to contain substantially all of beta particles emitted from the depletion layer. The depth of each of the p-type and n-type layers is substantially equal to or greater than the maximum beta emission depth of the radioisotope.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.