High density metal-insulator-metal trench capacitor
US8492874B2 · kind B2 · utility
10Cited by
14References
25Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 4, 2011 |
| Grant date | Jul 23, 2013 |
| Priority date | — |
| Expiry date | Sep 1, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Higher capacitance density is achieved by increasing a surface area of a capacitor. A larger surface area may be obtained by forming isotropic ball shapes (a concave surface) in the trenches on the semiconductor die. The concave surfaces are fabricated by depositing bilayers of amorphous-silicon and silicon oxide. Openings are patterned in the silicon oxide hard mask for trenches. The openings are transferred to the amorphous-silicon layers through isotropic etching to form concave surfaces. Conducting, insulating, and conducting layers are deposited on the concave surfaces of the trenches by atomic layer deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.