Patent · US Active

Overlay measurement apparatus and method

US8493563B2 · kind B2 · utility

0Cited by

1References

20Claims

0Family size

Assignee

SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

Hoyeon Kim · Suwon-si, KR
Jeongho YEO · Suwon-si, KR

Key dates

Filing date	Aug 11, 2011
Grant date	Jul 23, 2013
Priority date	—
Expiry date	Feb 2, 2032

Classification

Technology area (CPC G)Physics
CPC primaryG01N21/956
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

An overlay measurement apparatus includes a stage on which a wafer comprising first and second overlay measurement keys, which are separated from each other, is placed. A nonlinear medium receives a reference beam and first and second diffracted beams respectively generated by the first and second overlay measurement keys. A detector detects a synthesized beam emitted from the nonlinear medium.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.