Patent · US Active

Memory device and program method thereof

US8493782B2 · kind B2 · utility

0Cited by
2References
14Claims
0Family size

Assignees

Inventors

Key dates

Filing dateOct 16, 2009
Grant dateJul 23, 2013
Priority date
Expiry dateOct 30, 2030

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C2211/5641
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

Provided are a flash memory system and a driving method thereof. A flash memory device according to an embodiment of the present invention includes a memory cell array including a plurality of memory cells, and a control logic. The control logic performs control for one-bit information to be stored in the plurality of memory cells. The control logic controls storing data in the plurality of memory cells multiple times without an erasion operation. Accordingly, the flash memory device does not execute an erasion operation, increasing an operation speed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.