Semiconductor device and method of manufacturing it
US8497141B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 8, 2011 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | Nov 2, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/423
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of manufacturing a semiconductor device capable of largely increasing the yield and a semiconductor device manufactured by using the method is provided. After a semiconductor layer is formed on a substrate, as one group, a plurality of functional portions with at least one parameter value different from each other is formed in the semiconductor layer for every unit chip area. Then, a subject that is changed depending on the parameter value is measured and evaluated and after that, the substrate is divided for every chip area so that a functional portion corresponding with a given criterion as a result of the evaluation is not broken. Thereby, at least one functional portion corresponding with a given criterion can be formed by every chip area by appropriately adjusting each parameter value.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.