Insulating film material, method of film formation using insulating film material, and insulating film
US8497391B2 · kind B2 · utility
3Cited by
1References
4Claims
0Family size
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Key dates
| Filing date | Jan 20, 2009 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | Oct 24, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76829
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An insulating film material for plasma CVD represented by a chemical formula (1) shown below, a method of film formation using the insulating film material, and an insulating film. According to the present invention, an insulating film having a low dielectric constant and a superior copper diffusion barrier property suitable for an interlayer insulating film or the like of a semiconductor device can be obtained. In the chemical formula (1), n represents an integer of 3 to 6, and each of R1 and R2 independently represents one of C2H, C2H3, C3H3, C3H5, C3H7, C4H5, C4H7, C4H9, C5H7, C5H9 and C5H11.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.