Patent · US Active

III-V nitride semiconductor device comprising a diamond layer

US8497513B2 · kind B2 · utility

11Cited by

3References

22Claims

0Family size

Assignee

Universität Ulm · DE

Inventors

Erhard Kohn · Blaustein, DE
Michele Dipalo · Ciambrin, IT
Farid Medjdoub · Goutroux, BE

Key dates

Filing date	Feb 26, 2009
Grant date	Jul 30, 2013
Priority date	—
Expiry date	Aug 17, 2029

Classification

Technology area (CPC G)Physics
CPC primaryG01N27/308
WIPO fieldMeasurement
WIPO sectorInstruments

Abstract

The invention relates to a semiconductor device, in particular to a chemical field effect transistor (ChemFET), a high-electron mobility transistor (HEMT) and an ion-sensitive field effect transistor (ISFET), as well as a method for manufacturing the same. The semiconductor device comprises a structure, the structure comprises a substrate, a first layer comprising GaN and a second layer comprising InAlN, wherein the first and the second layer are arranged parallely to each other on the substrate, and wherein the structure comprises a third layer comprising diamond.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.