Light emitting diode
US8497518B2 · kind B2 · utility
0Cited by
3References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 9, 2007 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | May 15, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/84
Abstract
A light-emitting diode and the manufacturing method thereof are disclosed. The manufacturing method comprises the steps of: sequentially forming a refraction dielectric layer, a bonding layer, an epitaxy structure and a first electrode on a permanent substrate, wherein the epitaxy structure comprises a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer stacked in sequence; and forming a second electrode on the portion surface of the second conductivity type semiconductor layer. Therefore the light-emitting diode is achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.