Multilayered photodiode and method of manufacturing the same
US8497535B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 2, 2011 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | Sep 2, 2031 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
Abstract
In a multilayered photodiode and a method of manufacturing the same, the multilayered photodiode comprises: a transparent substrate; a gate insulating film formed on the transparent substrate; a first metal layer formed on the gate insulating film; a semiconductor layer formed on the first metal layer so as to be in contact with the first metal layer; and a second metal layer formed on the semiconductor layer so as to be in contact with the semiconductor layer. The photodiode is vertically multilayered, and has a metal-insulator-metal (MIM) structure in which a P-N region is replaced by a metal, and in which a light-receiving region does not block incident light.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.