Semiconductor device and method for its manufacture
US8497563B2 · kind B2 · utility
1Cited by
1References
15Claims
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Key dates
| Filing date | Sep 15, 2008 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | Mar 3, 2029 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/115
Abstract
A semiconductor system having a trench MOS barrier Schottky diode, having an integrated substrate PN diode as a clamping element (TMBS-ub-PN), suitable in particular as a Zener diode having a breakdown voltage of approximately 20V for use in a vehicle generator system, the TMBS-sub-PN being made up of a combination of Schottky diode, MOS structure, and substrate PN diode, and the breakdown voltage of substrate PN diode BV_pn being lower than the breakdown voltage of Schottky diode BV_schottky and the breakdown voltage of MOS structure BV_mos.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.