Wafer, fabricating method of the same, and semiconductor substrate
US8497570B2 · kind B2 · utility
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18Claims
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Key dates
| Filing date | Jul 8, 2011 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | Jan 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/60
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A wafer, a fabricating method of the same, and a semiconductor substrate are provided. The wafer includes a first substrate layer formed at a first surface, a second substrate layer formed at a second surface opposite to the first surface, the second substrate layer having a greater oxygen concentration than the first substrate layer, and an oxygen diffusion protecting layer formed between the first substrate layer and the second substrate layer, the oxygen diffusion protecting layer being located closer to the first surface than to the second surface.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.