Thin-film capacitor with internally hollow through holes
US8498095B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 30, 2010 |
| Grant date | Jul 30, 2013 |
| Priority date | — |
| Expiry date | Aug 25, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/20
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A thin-film capacitor that is less prone to generation of internal cracking or peeling is provided. In a thin-film capacitor according to the present embodiment, because through holes H are formed in internal electrodes containing Ni as a principal component in a lamination direction, a surface area of at least some of the through holes H is in the range of 0.19 μm2 to 7.0 μm2, and a ratio of a surface area of the through holes H to a surface area of an entire main surface of the internal electrodes is in the range of 0.05% to 5%, peeling or cracking is suppressed from occurring at the boundaries between the internal electrodes and dielectric layers, and as a result, the yield is enhanced.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.