Patent · US Active

Deposition system and methods having improved material utilization

US8500962B2 · kind B2 · utility

1Cited by
27References
8Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 15, 2011
Grant dateAug 6, 2013
Priority date
Expiry dateOct 11, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/347
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

A method for substrate processing includes producing a magnetic field by a magnetron across the full width of a sputtering surface of a target in a first direction. The magnetron can produce two erosion grooves separated by a distance S on the sputtering surface. The method includes moving the magnetron continuously at a first speed by the distance S in a first segment along a linear travel path. The linear travel path is along a second direction perpendicular to the first direction. The method includes continuously sputtering a material off the sputtering surface and depositing the material on the substrate during the first segment, and moving the magnetron by the distance S in a second segment along the linear travel path at a second speed higher than the first speed without sputtering the material off the sputtering surface or sputtering materials off at significant lower rate.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.