Patent · US Active

Optoelectronic semiconductor component with current spreading layer

US8501513B2 · kind B2 · utility

1Cited by

7References

7Claims

0Family size

Assignee

OSRAM Opto Semiconductors GmbH · DE

Inventors

Magnus Ahlstedt · Regensburg, DE
Dieter Eissler · Nittendorf, DE
Robert Walter · Parsberg, DE
Ralph Wirth · Lappersdorf, DE

Key dates

Filing date	Sep 14, 2006
Grant date	Aug 6, 2013
Priority date	—
Expiry date	Sep 6, 2027

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY02E10/50
WIPO fieldOptics
WIPO sectorInstruments

Abstract

An optoelectronic semiconductor component comprising a semiconductor body (10) and a current spreading layer (3) is specified. The current spreading layer (3) is applied to the semiconductor body (10) at least in places. In this case, the current spreading layer (3) contains a metal (1) that forms a transparent electrically conductive metal oxide (2) in the current spreading layer, and the concentration (x) of the metal (1) decreases from that side of the current spreading layer (3) which faces the semiconductor body (10) toward that side of said current spreading layer which is remote from the semiconductor body (10). A method for producing such a semiconductor component is also disclosed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.