Patent · US Active

Radiofrequency plasma reactor and method for manufacturing vacuum process treated substrates

US8501528B2 · kind B2 · utility

0Cited by
3References
19Claims
0Family size

Assignee

Inventor

Key dates

Filing dateSep 28, 2009
Grant dateAug 6, 2013
Priority date
Expiry dateDec 5, 2029

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01J37/32091
  • WIPO fieldElectrical machinery, apparatus, energy
  • WIPO sectorElectrical engineering

Abstract

An electrode (3i) of a radiofrequency parallel plate plasma reactor includes an electrode surface of a multitude of surfaces of metal members (28) which reside on dielectric spacing members (29), whereby the metal members (28) are mounted in an electrically floating manner. The dielectric members (29) are mounted, opposite to the metal members (28), upon a metal Rf supply body (14a).

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.