Excited gas injection for ion implant control
US8501624B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 4, 2008 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Mar 24, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/24514
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion source that utilizes exited and/or atomic gas injection is disclosed. In an ion beam application, the source gas can be used directly, as it is traditionally supplied. Alternatively or additionally, the source gas can be altered by passing it through a remote plasma source prior to being introduced to the ion source chamber. This can be used to create excited neutrals, heavy ions, metastable molecules or multiply charged ions. In another embodiment, multiple gasses are used, where one or more of the gasses are passed through a remote plasma generator. In certain embodiments, the gasses are combined in a single plasma generator before being supplied to the ion source chamber. In plasma immersion applications, plasma is injected into the process chamber through one or more additional gas injection locations. These injection locations allow the influx of additional plasma, produced by remote plasma sources external to the process chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.