Nonvolatile memory device using variable resistive element
US8502184B2 · kind B2 · utility
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Key dates
| Filing date | May 6, 2011 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | May 6, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/823
Abstract
A nonvolatile memory device and a method of fabricating the same are provided. The nonvolatile memory device includes a conductive pillar that extends from a substrate in a first direction, a variable resistor that surrounds the conductive pillar, a switching material layer that surrounds the variable resistor, a first conductive layer that extends in a second direction, and a first electrode that extends in a third direction and contacts the first conductive layer and the switching material layer. Not one of the first, second, and third directions is parallel to another one of the first, second, and third directions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.