Switching device and methods for controlling electron tunneling therein
US8502198B2 · kind B2 · utility
1Cited by
6References
15Claims
0Family size
Assignee
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Key dates
| Filing date | Apr 28, 2006 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Sep 22, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10K10/50
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A switching device includes at least one bottom electrode and at least one top electrode. The top electrode crosses the bottom electrode at a non-zero angle, thereby forming a junction. A metal oxide layer is established on at least one of the bottom electrode or the top electrode. A molecular layer including a monolayer of organic molecules and a source of water molecules is established in the junction. Upon introduction of a forward bias, the molecular layer facilitates a redox reaction between the electrodes, thereby reducing a tunneling gap between the electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.