High power allngan based multi-chip light emitting diode
US8502239B2 · kind B2 · utility
25Cited by
48References
18Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 10, 2005 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Jan 7, 2027 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/856
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A light emitting diode chip having a substantially transparent substrate and having an aspect ratio, which defines an elongated geometry provides enhanced efficiency and brightness. Method for forming and operating the same are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.