Light emitting structure and method of manufacture thereof
US8502258B2 · kind B2 · utility
18Cited by
12References
9Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Feb 15, 2010 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Aug 23, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/018
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor structure having an electrically conducting silicon substrate and a GaN semiconductor device separated from the substrate by a buffer layer is provided. The buffer layer electrically connects the silicon substrate with the GaN semiconductor device. In addition, a GaN LED arranged in a flip chip orientation on the buffer layer on the substrate is provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.