Nitride semiconductor light emitting device
US8502266B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Sep 8, 2010 |
| Grant date | Aug 6, 2013 |
| Priority date | — |
| Expiry date | Mar 17, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/825
Abstract
A nitride semiconductor light emitting device includes n-type and p-type nitride semiconductor layers, and an active layer disposed between the n-type and p-type nitride semiconductor layers and having a stack structure in which a plurality of quantum barrier layers and one or more quantum well layers are alternately stacked. A net polarization of the quantum barrier layer is smaller than or equal to a net polarization of the quantum well layer. A nitride semiconductor light emitting device can be provided, which can realize high efficiency even at high currents by minimizing the net polarization mismatch between the quantum barrier layer and the quantum well layer. Also, a high-efficiency nitride semiconductor light emitting device can be achieved by reducing the degree of energy-level bending of the quantum well layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.