Optoelectronic semiconductor component

US8502267B2 · kind B2 · utility

Assignee

• OSRAM Opto Semiconductors GmbH · DE

Inventors

• Alexander Behres · Pfatter, DE
• Matthias Sabathil · Regensburg, DE

Key dates

• Filing date: Jan 5, 2010
• Grant date: Aug 6, 2013
• Expiry date: Jan 5, 2030

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01S5/32341
• WIPO field: Optics
• WIPO sector: Instruments

Abstract

An optoelectronic semiconductor component includes an active layer that emits radiation, the active layer surrounded by cladding layers, wherein the cladding layers and/or the active layer include(s) an indium-containing phosphide compound semiconductor material and the phosphide compound semiconductor material contains at least one of elements Bi or Sb as an additional element of main group V.